The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Sep. 22, 2008
Yoshiaki Hashiba, Kanagawa-ken, JP;
Yoshiaki Hashiba, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A negative voltage detection circuit including first and second MOS transistor circuits configured to change a dimension size of a transistor based on a control signal, a first comparator circuit, a gate electrode of the second MOS transistor circuit commonly coupled to the gate electrode of the first MOS transistor circuit forming a current mirror circuit, a resistive divider supplied with a negative voltage to be detected, and coupled to the end of the current path of the second MOS transistor circuit to generate a second voltage, a second voltage comparator circuit to compare the second voltage with a reference voltage and to generate a detection signal corresponding to the value of the negative voltage, and a detection circuit for detecting a temperature or power supply voltage, generate the control signal corresponding to the detection result, and supply the control signal to the first and second MOS transistor circuits.