The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Dec. 29, 2005
Applicants:
Shou-chang Tsao, San Jose, CA (US);
Yan LI, Milpitas, CA (US);
Inventors:
Shou-Chang Tsao, San Jose, CA (US);
Yan Li, Milpitas, CA (US);
Assignee:
Sandisk Corporation, Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
Power-saving techniques are employed in sensing a group of non-volatile memory cells in parallel. One technique is that the coupling of the memory cells to their bit lines is delayed during a precharge operation in order to reduce the cells' currents working against the precharge. Another technique is that a power-consuming precharge period is minimized by preemptively starting the sensing in a multi-pass sensing operation. High current cells not detected as a result of the premature sensing will still be able to be detected in a subsequent pass.