The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2010

Filed:

Mar. 21, 2007
Applicants:

Ana R. Londergan, Santa Clara, CA (US);

Bangalore R. Natarajan, Cupertino, CA (US);

Evgeni Gousev, Saratoga, CA (US);

James Randolph Webster, San Jose, CA (US);

David Heald, Solvang, CA (US);

Inventors:

Ana R. Londergan, Santa Clara, CA (US);

Bangalore R. Natarajan, Cupertino, CA (US);

Evgeni Gousev, Saratoga, CA (US);

James Randolph Webster, San Jose, CA (US);

David Heald, Solvang, CA (US);

Assignee:

Qualcomm Mems Technologies, Inc, San Diego, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.


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