The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7733161 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 08, 2010

Filed:

Feb. 15, 2008
Applicants:

Jeffrey H. Dreibelbis, Williston, VT (US);

John A. Fifield, Underhill, VT (US);

Inventors:

Jeffrey H. Dreibelbis, Williston, VT (US);

John A. Fifield, Underhill, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 3/18 (2006.01); G05F 3/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

A voltage boost system, IC and design structure are disclosed for boosting a supply voltage while preventing forward biasing of n-well structures. The voltage boost system may include a first voltage boost circuit producing a first boosted voltage using at least one voltage boost sub-circuit, each of the at least one voltage boost sub-circuit having an output passgate in an n-well; a second voltage boost circuit producing a second boosted voltage, the n-well of each output passgate being biased using the second boosted voltage, wherein the second boosted voltage is greater than the first boosted voltage. Voltage boost sub-circuits may use gate control circuitry to reduce gate oxide stress, thus allowing lower voltage level FETs to be used.


Find Patent Forward Citations

Dreibelbis, Jeffrey. (2010). Voltage boost system, ic and design structure (U.S. Patent No. 7733161). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7733161

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