The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Mar. 22, 2006
Yanjun MA, Bellevue, WA (US);
Ronald A. Oliver, Seattle, WA (US);
Todd E. Humes, Shoreline, WA (US);
Jaideep Mavoori, Bellevue, WA (US);
Yanjun Ma, Bellevue, WA (US);
Ronald A. Oliver, Seattle, WA (US);
Todd E. Humes, Shoreline, WA (US);
Jaideep Mavoori, Bellevue, WA (US);
Virage Logic Corporation, Fremont, CA (US);
Abstract
A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped to a second conductivity type opposite that of the first conductivity type. A region of metal-containing material is disposed over the first well to form a Schottky junction at an interface between the region of metal-containing material and the first well. In one embodiment, a first well contact is disposed in a portion of the first well. A second well is disposed over the substrate wherein the second well includes a material doped to the first conductivity type. In one embodiment, the first well and the second well are not in direct contact with one another.