The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2010

Filed:

Nov. 21, 2008
Applicants:

Song-mi Hong, Hwaseong-si, KR;

Jung-soo Rhee, Seoul, KR;

Beohm-rock Choi, Seoul, KR;

Jin-koo Chung, Suwon-si, KR;

Jianpu Wang, Suwon-si, KR;

Dong-won Lee, Seongnam-si, KR;

Inventors:

Song-mi Hong, Hwaseong-si, KR;

Jung-soo Rhee, Seoul, KR;

Beohm-rock Choi, Seoul, KR;

Jin-koo Chung, Suwon-si, KR;

Jianpu Wang, Suwon-si, KR;

Dong-won Lee, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A TFT substrate with reduced pixel defect rate is presented. The TFT substrate includes a pixel electrode, a negative line to apply a reverse voltage to the pixel electrode, and a recovery transistor including a drain electrode overlapping a part of the negative line with a insulating layer disposed between the negative line and the drain electrode. A contact hole is formed on the negative line and the drain electrode, and a bridge electrode connects the negative line and the drain electrode through the contact hole. The thin film transistor substrate and a display apparatus presented herein protect a data line assembly metal layer and decrease pixel defect. An improved reverse voltage efficiency is applied to a pixel electrode to protect a drain electrode.


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