The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Sep. 22, 2006
Akio Sebe, Osaka, JP;
Naoki Kotani, Hyogo, JP;
Shinji Takeoka, Osaka, JP;
Gen Okazaki, Hyogo, JP;
Junji Hirase, Osaka, JP;
Kazuhiko Aida, Chiba, JP;
Akio Sebe, Osaka, JP;
Naoki Kotani, Hyogo, JP;
Shinji Takeoka, Osaka, JP;
Gen Okazaki, Hyogo, JP;
Junji Hirase, Osaka, JP;
Kazuhiko Aida, Chiba, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A MIS transistor includes a gate electrode portion, insulating sidewalls formed on side surfaces of the gate electrode portion, source/drain regions and a stress film formed so as to cover the gate electrode portion and the source/drain regions. A height of an upper surface of the gate electrode portion is smaller than a height of an upper edge of each of the insulating sidewalls. A thickness of first part of the stress film located on the gate electrode portion is larger than a thickness of second part of the stress film located on the source/drain regions.