The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Dec. 19, 2003
Takenori Osada, Ichihara, JP;
Tsuyoshi Nakano, Ichihara, JP;
Takayuki Inoue, Sodegaura, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Sumika Epi Solution Company, Ltd., Tokyo, JP;
Abstract
In a compound semiconductor epitaxial substrate used for a strain channel high electron mobility field effect transistor which comprises an InGaAs layer as a channel layerand AlGaAs layers containing n-type impurities as electron supplying layersand, the channel layerhas an electron mobility at room temperature of 8300 cm/V·s or more by adjusting an In composition of the InGaAs layer composing the channel layerto 0.25 or more and optimizing the In composition and the thickness of the channel layer. GaAs layersandhaving a thickness of 4 nm or more each may be laminated respectively in contact with a top surface and a bottom surface of the channel layer