The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Aug. 08, 2007
Applicant:
Kenichi Kawaguchi, Kawasaki, JP;
Inventor:
Kenichi Kawaguchi, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/08 (2006.01); H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In order to make it possible to grow up a light emitting device easily on a substrate made of a Si material system while production of an anti-phase domain can be prevented and a sufficiently high luminous efficiency can be obtained, the light emitting device is configured as a device which includes a substrate () formed from a Si material system, a SiGeC(0<x≦1, 0≦y≦0.005) layer () and quantum dots () made of a direct transition type compound semiconductor. The quantum dots () are included in the SiGeC(0<x≦1, 0≦y≦0.005) layer () formed on the substrate ().