The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Nov. 22, 2005
Hiroko Yamamoto, Kanagawa, JP;
Hiroko Yamamoto, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
The invention provides a manufacturing method of an insulating film having a plurality of pores, as well as a manufacturing method of a highly integrated semiconductor device with high yield. According to the invention, a porous insulating film is formed by forming a plurality of pores in an interlayer insulating film using a laser beam, which results in lower dielectric constant of the interlayer insulating film. In addition, a composition containing conductive particles is discharged onto the porous insulating film by a droplet discharge method typified by an ink jet printing method, and then baked to form a wire. As the laser beam, an ultrashort pulse laser beam is preferably used.