The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Jan. 25, 2006
Makoto Nakamura, Kawasaki, JP;
Makoto Nakamura, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of fabricating a semiconductor device on a Si substrate includes a first step of forming an insulation film containing an oxide of Zr or Hf on a Si substrate, a second step of forming a gate electrode film on the insulation film, a third step of patterning the gate electrode film by an etching process, a fourth step of annealing, after the third step, the insulation film in a processing gas ambient containing halogen, and a fifth step of removing the insulation film applied with the annealing process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile