The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Jul. 26, 2004
Hyun-chul Shin, Seoul, KR;
Jeong-ho Park, Gyeonggi-do, KR;
Jung-young Lee, Gyeonggi-do, KR;
Kwang-won Park, Gyeonggi-do, KR;
Hyun-Chul Shin, Seoul, KR;
Jeong-Ho Park, Gyeonggi-do, KR;
Jung-Young Lee, Gyeonggi-do, KR;
Kwang-Won Park, Gyeonggi-do, KR;
Abstract
Methods of forming a cell of a NOR-type flash memory device are provided in which a first gate pattern having a first sidewall and a second gate pattern having a second sidewall that opposes the first sidewall are formed on a semiconductor substrate. A source/drain region is formed in the semiconductor substrate between the first and second gate patterns. An etch stop layer is formed on the first and second sidewalls that defines a gap region. A dielectric layer is formed in the gap region, and is then etched to form a contact hole. Finally, a conductive material is deposited in the contact hole.