The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 2010

Filed:

Sep. 04, 2007
Applicants:

Sun-oo Kim, Hopewell Junction, NY (US);

Yoon-hae Kim, Gyeonggi, KR;

Inventors:

Sun-Oo Kim, Hopewell Junction, NY (US);

Yoon-Hae Kim, Gyeonggi, KR;

Assignees:

Infineon Technologies AG, Neubiberg, DE;

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming a first insulating material over the semiconductor wafer, and forming a plurality of first features and a plurality of second features in the first insulating material. The plurality of first features is removed, leaving an unfilled pattern in the first insulating material. The unfilled pattern in the first insulating material is filled with a second insulating material.


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