The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Sep. 28, 2007
Sung-gun Kang, Suwon-si, KR;
Sung-Gun Kang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of forming a semiconductor device having an offset spacer may include forming a gate electrode on a semiconductor substrate. An etch stop layer including a nitride may be formed on the entire surface of the semiconductor substrate having the gate electrode. First spacers may be formed on the sidewalls of the gate electrode. The first spacers may be formed of a material layer having an etch selectivity with respect to the etch stop layer. The etch stop layer may be exposed on the semiconductor substrate on both sides of the gate electrode. Lightly-doped drain (LDD) regions may be formed in the semiconductor substrate using the gate electrode and the first spacers as an ion implantation mask. Second spacers may be formed on the first spacers. Accordingly, a semiconductor device having an offset spacer may be provided.