The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7732250 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 08, 2010

Filed:

May. 02, 2008
Applicant:

Se-ho Lee, Gyeonggi-do, KR;

Inventor:

Se-Ho Lee, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a structure in a phase changeable memory cell can include forming a bottom electrode having an interlayer dielectric layer thereon, the bottom electrode having a recess therein that extends beyond a boundary between the bottom electrode and the interlayer dielectric. A phase changeable layer can be formed in the recess including a protruding potion of the phase changeable layer that protrudes into the bottom electrode beyond the boundary.


Find Patent Forward Citations

Lee, Se-Ho. (2010). Methods of forming phase changeable layers including protruding portions in electrodes thereof (U.S. Patent No. 7732250). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7732250

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…