The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Dec. 06, 2005
Sang Gi Lee, Bucheon, KR;
Sang Gi Lee, Bucheon, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
A method of fabricating a vertical CMOS image sensor is disclosed, to improve the integration with the decrease in size of pixel by minimizing the lateral diffusion, in which phosphorous and arsenic ions are implanted while controlling the dose and energy, the method including forming a first photodiode in a semiconductor substrate; forming a first epitaxial layer on the semiconductor substrate; forming a first plug by sequentially implanting first and second ions in the first epitaxial layer; forming a second photodiode in the first epitaxial layer; forming a second epitaxial layer in the first epitaxial layer; forming an isolation area in the second epitaxial layer; and forming a third photodiode and a second plug in the second epitaxial layer.