The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Jun. 03, 2009
Rafael I. Aldaz, Pleasanton, CA (US);
James G. Neff, Felton, CA (US);
Rafael I. Aldaz, Pleasanton, CA (US);
James G. Neff, Felton, CA (US);
Philips Lumileds Lighting Company, LLC, San Jose, CA (US);
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A portion of the light emitting layer and the p-type region are removed to expose a portion of the n-type region. A first metal contact is formed on an exposed portion of the n-type region and a second metal contact is formed on a remaining portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A surface of the device is then planarized by removing a portion of at least one of the first metal contact, the second metal contact, and the dielectric material.