The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Sep. 30, 2005
O Seo Park, Hopewell Junction, NY (US);
O Seo Park, Hopewell Junction, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
A method for generating or refining an OPC model for use in wafer fabrication. A predetermined feature layout is used to prepare a mask for use in, for example, a photolithographic process. The mask is used to create structures corresponding to mask features on a semiconductor wafer using the mask. Measurements of the actual mask features and wafer features may then be assessed and correlated, and the results used to generate an OPC model or refine an existing one. In addition, the OPC may be used to simulate a fabrication operation by applying the OPC tool to a predetermined layout to produce a mask image and a wafer image, and then comparing the predetermined layout to the simulated wafer image to determine at least one fitness value.