The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7732105 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 08, 2010

Filed:

Jul. 13, 2007
Applicants:

Do-yul Yoo, Gyeonggi-do, KR;

Ji-yong You, Gyeonggi-do, KR;

Joong-sung Kim, Gyeonggi-do, KR;

Hyung-joo Youn, Gyeonggi-do, KR;

Inventors:

Do-Yul Yoo, Gyeonggi-do, KR;

Ji-Yong You, Gyeonggi-do, KR;

Joong-Sung Kim, Gyeonggi-do, KR;

Hyung-Joo Youn, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggie-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a photomask and a method of fabricating a semiconductor device. The photomask includes a photomask substrate including a chip region and a scribe lane region, with an overlay mark formed in the scribe lane region. The overlay mark includes one or more sub-overlay marks. Each of the sub-overlay marks includes a plurality of unit regions sequentially connected to each other and having different widths, where the width of a given unit region is constant.


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Yoo, Do-Yul. (2010). Photomask with overlay mark and method of fabricating semiconductor device (U.S. Patent No. 7732105). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7732105

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