The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 2010
Filed:
Dec. 28, 2007
Young Hwan Kim, Seoul, KR;
Woon JO Cho, Gyeonggi-do, KR;
Seong Kim, Ii, Seoul, KR;
Chun Keun Kim, Seoul, KR;
Yong Tae Kim, Gyeonggi-do, KR;
Young Hwan Kim, Seoul, KR;
Woon Jo Cho, Gyeonggi-do, KR;
Seong Kim, II, Seoul, KR;
Chun Keun Kim, Seoul, KR;
Yong Tae Kim, Gyeonggi-do, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
A method for preparing a ZnO nanocrystal directly on a silicon substrate includes the steps of: (S) forming a Zn—Si—O composite thin film on the silicon substrate; and (S) thermally treating the obtained thin film. Particularly, ZnO nanocrystals are formed in an amorphous Zn—Si—O composite thin film by controlling the composition of the Zn—Si—O composite thin film and heating temperature thereof. With the present invention method for preparing a ZnO nanocrystal directly on a silicon substrate, more possibilities are opened up for the applications of ZnO nanocrystals to an optoelectronic device in use of a silicon substrate.