The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Nov. 30, 2004
Tomiji Tanaka, Saitama, JP;
Kazuo Takahashi, Tokyo, JP;
Motonobu Takeya, Miyagi, JP;
Sony Corporation, Tokyo, JP;
Abstract
An external cavity type semiconductor laser that has a larger output and a more excellent single mode characteristic than a conventional external cavity type semiconductor laser is provided. The external cavity type semiconductor laser has a laser diode, a window glass, a grating, and a lens. The external cavity type semiconductor laser has several modifications over the conventional one. A first modification is that the window glassis inclined to a beam emission surfaceof a laser diodefor a predetermined angle. A second modification is that arrangements of the laser diodeand so forth are adjusted so that a S wave reaches the grating. A third modification is that when an output power of the laser diodeis 45 mW or less, a kink is suppressed. The other modifications are that a reflectance of a beam emission surface of the laser diode, a numerical aperture of the lens, an external cavity length, and a reflectance of a first order beam of the grating are optimized to their proper values.