The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Feb. 01, 2008
Taiwa Okanobu, Tokyo, JP;
Taiwa Okanobu, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed herein is a variable-gain amplification circuit, wherein the sources of first and second MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are tied to a common connection point connected to a current source. An input signal is supplied to the gates of the first and second MOSFETs. The drains of the first and second MOSFETs are connected to the sources of third and fourth MOSFETs respectively whereas the drains of the third and fourth MOSFETs are connected to two output terminals respectively, a gain control voltage is supplied to the gates of both the third and fourth MOSFETs. When control is executed in order to lower the gain control voltage supplied to the gates of both the third and fourth MOSFETs, other control is also executed in order to raise a bias voltage applied to the gates of both the first and second MOSFETs.