The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2010

Filed:

Jun. 07, 2005
Applicants:

Kenichi Kondo, Tokyo, JP;

Shuichi Taya, Tokyo, JP;

Yasuyuki Miyake, Tokyo, JP;

Inventors:

Kenichi Kondo, Tokyo, JP;

Shuichi Taya, Tokyo, JP;

Yasuyuki Miyake, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 (2006.01); H01J 63/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light-emitting device can be configured to have little variation in light emission characteristics even at increased temperatures. A light-emitting device can include a light-emitting section for emitting light with a predetermined wavelength, and a fluorescent material for absorbing a part of light emitted from the light-emitting section and emitting light with a longer wavelength. The light-emitting device can mix the light with the predetermined wavelength from the light-emitting section and the light with the longer wavelength from the fluorescent material, and thereby emit a mixed light. The fluorescent material can include single crystal grains in which primary grains have a diameter of 1 μm or less. Crystal defects, such as a grain boundary, do not often and sometimes never occur in the single crystal grain having a diameter of 1 μm or less. Thus, it is possible to restrain a phenomenon in which a crystal defect non-radially emits absorbed energy (as heat) which then reduces light emission efficiency.


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