The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Nov. 21, 2003
Tomohiro Nishiyama, Tokyo, JP;
Masamoto Tago, Tokyo, JP;
Tomohiro Nishiyama, Tokyo, JP;
Masamoto Tago, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The reliabilities of a wiring substrate and a semiconductor apparatus are improved by reducing the internal stress caused by the difference of thermal expansion coefficients between a base substrate and a semiconductor chip. A wiring layer () is provided on one surface of a silicon base (). An electrode as the uppermost layer of the wiring layer () is provided with an external bonding bump (). A through-electrode () is formed in the base () for electrically connecting the wiring layer () and an electrode terminal. The electrode terminal on the chip mounting surface is bonded to an electrode terminal of a semiconductor chip () by an internal bonding bump (). The thermal expansion coefficient of the silicon base () is equivalent to that of the semiconductor chip () and not more than that of the wiring layer ().