The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Nov. 10, 2005
Makoto Kojima, Suita, JP;
Makoto Kojima, Suita, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The invention provides a CMOS integrated circuit capable of carrying out an operation at a comparatively high supply voltage, comprising a first MOS type transistor having a drain profile to come in contact with a gate through a low concentration region having an impurity concentration which is equal to or lower than a predetermined concentration at a drain end, and a second MOS type transistor and transfer gate having the same polarity which is connected to a gate of the first MOS type transistor, wherein a gate voltage is applied to the gate of the first MOS type transistor through the second MOS type transistor and transfer gate to which a predetermined potential (a shielding voltage) is applied.