The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Mar. 23, 2007
Takuya Konno, Kanagawa-ken, JP;
Yoshio Ozawa, Kanagawa-ken, JP;
Tetsuya Kai, Kanagawa-ken, JP;
Yasushi Nakasaki, Kanagawa-ken, JP;
Yuuichiro Mitani, Kanagawa-ken, JP;
Takuya Konno, Kanagawa-ken, JP;
Yoshio Ozawa, Kanagawa-ken, JP;
Tetsuya Kai, Kanagawa-ken, JP;
Yasushi Nakasaki, Kanagawa-ken, JP;
Yuuichiro Mitani, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes: a semiconductor layer; an insulating film provided on the semiconductor layer; and a charge storage layer provided on the insulating film. The semiconductor layer has a channel formation region in its surface portion. The insulating film contains silicon, germanium, and oxygen. The charge storage layer is capable of storing charge supplied from the semiconductor layer through the insulating film. A method of manufacturing a semiconductor device includes: forming a silicon oxide film on a surface of a semiconductor layer; introducing germanium into the silicon oxide film; forming an insulating film containing silicon, germanium, and oxygen by heat treatment under oxidizing atmosphere; and forming a charge storage layer on the insulating film, the charge storage layer being capable of storing charge supplied from the semiconductor layer through the insulating layer.