The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Aug. 24, 2005
Applicant:
Jiutao LI, Boise, ID (US);
Inventor:
Jiutao Li, Boise, ID (US);
Assignee:
Aptina Imaging Corporation, Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CMOS imager having reduced dark current and methods of forming the same. A nitrided gate oxide layer having approximately twice the thickness of a typical nitrided gate oxide is provided over the photosensor region of a CMOS imager. The gate oxide layer provides an improved contaminant barrier to protect the photosensor, contains the p+ implant distribution in the surface of the p+ pinned region of the photosensor, and reduces photon reflection at the photosensor surface, thereby decreasing dark current.