The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Dec. 13, 2004
Hyun Tak Kim, Daejeon, KR;
Doo Hyeb Youn, Daejeon, KR;
Byung Gyu Chae, Daejeon, KR;
Kwang Yong Kang, Daejeon, KR;
Yong Sik Lim, Chungcheongbuk-do, KR;
Gyungock Kim, Seoul, KR;
Sunglyul Maeng, Chungcheongbuk-do, KR;
Seong Hyun Kim, Daejeon, KR;
Hyun Tak Kim, Daejeon, KR;
Doo Hyeb Youn, Daejeon, KR;
Byung Gyu Chae, Daejeon, KR;
Kwang Yong Kang, Daejeon, KR;
Yong Sik Lim, Chungcheongbuk-do, KR;
Gyungock Kim, Seoul, KR;
Sunglyul Maeng, Chungcheongbuk-do, KR;
Seong Hyun Kim, Daejeon, KR;
Abstract
Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.