The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Sep. 11, 2006
Tsutomu Hayakawa, Tokyo, JP;
Tsutomu Hayakawa, Tokyo, JP;
Elipida Memory Inc., Tokyo, JP;
Abstract
The invention provides a novel structure of a phase change memory device. In the phase change memory device of the invention, an electrode acting as a radiating fin does not exit immediately above a phase change area of a phase change layer (). A heater electrode () and landing electrode layer () both contact the bottom of the phase change layer () made of GST. The landing electrode layer () contacts the bottom of the phase change layer () to partially overlap in a region off from a portion immediately above the contact face (Y) of the phase change layer and heater electrode. The contact electrode () is directly connected to the landing electrode layer () in a portion off from a portion immediately above the heater electrode (). The phase change layer of GST or the like does not exist immediately below the contact electrode.