The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Sep. 02, 2008
Shigeyuki Shimoto, Konosu, JP;
Takashi Ono, Hadano, JP;
Kazufumi Azuma, Yokohama, JP;
Masakiyo Matsumura, Kamakura, JP;
Shigeyuki Shimoto, Konosu, JP;
Takashi Ono, Hadano, JP;
Kazufumi Azuma, Yokohama, JP;
Masakiyo Matsumura, Kamakura, JP;
Advanced LCD Technologies Development Center Co., Ltd., Yokohama-shi, JP;
Abstract
A method of crystallizing a semiconductor film including splitting a pulse laser beam oscillated from a laser oscillator, and synthesizing the split pulse laser beams after the split pulse laser beams have propagated through optical paths different in optical path length, modulating the synthesized pulse laser beam into a pulse laser beam by a phase modulating element, and irradiating a non-single-crystal film formed on a substrate with the laser beam to crystallize the non-single-crystal film. Splitting the pulse laser beam and synthesizing the split pulse laser beams are performed using at least three optical splitting/synthesizing units arranged in order, and include sequentially splitting one pulse laser beam split by one optical splitting/synthesizing unit by succeeding splitting/synthesizing unit, and synthesizing the other pulse laser beam split by one optical splitting/synthesizing unit with the other pulse laser beam split by preceding splitting/synthesizing unit.