The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Aug. 30, 2005
Bruce D. Ulrich, Beaverton, OR (US);
Lisa H. Stecker, Vancouver, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Lisa H. Stecker, Vancouver, WA (US);
Fengyan Zhang, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A method of etching a top electrode/ferroelectric stack using an etch stop layer includes forming a first layer of a first dielectric material on a substrate; forming a bottom electrode in the first layer of a first dielectric material; depositing an etch stop layer on the first layer of the first dielectric material and the bottom electrode, including forming a hole therein; depositing a layer of ferroelectric material and depositing top electrode material on the ferroelectric material to form a top electrode/ferroelectric stack; stack etching the top electrode and ferroelectric material; depositing a layer of a second dielectric material encapsulating the top electrode and ferroelectric material; etching the layer of the second dielectric material to form a sidewall about the top electrode and ferroelectric material; and depositing a second and third layers of the first dielectric material.