The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Jun. 30, 2008
Ik Soo Choi, Icheon-si, KR;
Sung Yoon Cho, Suwon-si, KR;
Ik Soo Choi, Icheon-si, KR;
Sung Yoon Cho, Suwon-si, KR;
Hynix Semiconductor Inc, Icheon-si, KR;
Abstract
In a method for forming a fine pattern, a target layer to be patterned is formed on a semiconductor substrate and a polysilicon layer is formed on the target layer. A partition is then formed on the polysilicon layer with an amorphous carbon layer pattern. A spacer is attached to a sidewall of the partition. Thereafter, the spacer is divided into bar patterns by selectively removing the partition. A polysilicon layer pattern is formed by selectively etching a portion of the poly silicon layer exposed by the divided bar patterns and then a target layer pattern is formed by selectively etching a portion of the target layer exposed by the polysilicon layer pattern.