The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Jul. 19, 2007
Byoung-jae Bae, Hwasung-si, KR;
Sung-lae Cho, Yongin-si, KR;
Jin-il Lee, Sungnam-si, KR;
Hye-young Park, Sungnam-si, KR;
Ji-eun Lim, Yongin-si, KR;
Young-lim Park, Ahnyang-si, KR;
Byoung-Jae Bae, Hwasung-si, KR;
Sung-Lae Cho, Yongin-si, KR;
Jin-Il Lee, Sungnam-si, KR;
Hye-Young Park, Sungnam-si, KR;
Ji-Eun Lim, Yongin-si, KR;
Young-Lim Park, Ahnyang-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method includes forming a phase change material layer on a substrate using a deposition process that employs a process gas. The process gas includes a germanium source gas, and the germanium source gas includes at least one of the atomic groups '—N═C═O', '—N═C═S', “—N═C═Se”, “—N═C═Te”, “—N═C═Po” and “—C≡N”.