The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Sep. 12, 2008
Andrew David Hanser, Raleigh, NC (US);
Edward Alfred Preble, Raleigh, NC (US);
Lianghong Liu, Raleigh, NC (US);
Terry Lee Clites, Raleigh, NC (US);
Keith Richard Evans, Raleigh, NC (US);
Andrew David Hanser, Raleigh, NC (US);
Edward Alfred Preble, Raleigh, NC (US);
Lianghong Liu, Raleigh, NC (US);
Terry Lee Clites, Raleigh, NC (US);
Keith Richard Evans, Raleigh, NC (US);
Kyma Technologies, Inc., Raleigh, NC (US);
Abstract
Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal. The seed crystal may have crystalline edges of equivalent crystallographic orientation.