The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Jan. 14, 2005
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Noboru Ichinose, Tokyo, JP;
Kiyoshi Shimamura, Tokyo, JP;
Kazuo Aoki, Tokyo, JP;
Encarnacion Antonia Garcia Villora, Tokyo, JP;
Waseda University, Tokyo, JP;
Abstract
To provide a method of controlling a conductivity of a GaOsystem single crystal with which a conductive property of a β-GaOsystem single crystal can be efficiently controlled. The light emitting element includes an n-type β-GaOsubstrate, and an n-type β-AlGaOcladding layer, an active layer, a p-type β-AlGaOcladding layer and a p-type β-GaOcontact layer which are formed in order on the n-type β-GaOsubstrate. A resistivity is controlled to fall within the range of 2.0×10to 8×10Ωcm and a carrier concentration is controlled to fall within the range of 5.5×10to 2.0×10/cmby changing a Si concentration within the range of 1×10to 1 mol %.