The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Jan. 09, 2007
Hiroshi Ishihara, Yokohama, JP;
Kenji Maruyama, Kawasaki, JP;
Tetsuro Tamura, Kawasaki, JP;
Hiromasa Hoko, Kawasaki, JP;
Hiroshi Ishihara, Yokohama, JP;
Kenji Maruyama, Kawasaki, JP;
Tetsuro Tamura, Kawasaki, JP;
Hiromasa Hoko, Kawasaki, JP;
Fujitsu Microelectronics Limited, Yokohama, JP;
Abstract
The invention relates to a semiconductor element used for a nonvolatile semiconductor storage device or the like, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof and a manufacturing method of those, and has an object to provide a semiconductor element in which scaling and integration of cells are possible, storage characteristics of data are excellent, and reduction in power consumption is possible, a semiconductor storage device using the same, a data writing method thereof, a data reading method thereof, and a manufacturing method of those. A pn junction diode GD with a ferroelectric gate as the semiconductor element includes a gate electrode formed on a ferroelectric film, an inversion layer formation region in which an inversion layer is formed in a semiconductor substrate below the ferroelectric film according to a polarization direction of the ferroelectric film, a cathode region formed on one of both sides of the inversion layer formation region, and an anode region formed on the other of both the sides.