The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2010

Filed:

Dec. 28, 2006
Applicants:

Jae Chul OM, Kyeongki-do, KR;

Nam Kyeong Kim, Kyeongki-do, KR;

Inventors:

Jae Chul Om, Kyeongki-do, KR;

Nam Kyeong Kim, Kyeongki-do, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8239 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing a NAND flash memory device is disclosed. A semiconductor substrate of a portion in which a source select line SSL and a drain select line DSL will be formed is recessed selectively or entirely to a predetermined depth. Accordingly, the channel length of a gate can be increased and disturbance can be reduced. It is therefore possible to improve the reliability and yield of devices.


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