The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Sep. 20, 2005
Kinya Ohtani, Kanagawa, JP;
Kinya Ohtani, Kanagawa, JP;
NEC Electronics Corporation, Kawasaki, Kanagawa, JP;
Abstract
The leakage current generated due to the extension of the depleted layer to the end of the chip is reduced. In MOSFET, the depths of the trenchesin the gate pad portionand the circumference portionare larger than the depths of the trenchesin the cell region. Therefore, the depleted layer extending from the cell regionalong the direction toward the gate pad portionor the direction toward the circumference portionis blocked by the presence of the trench. In other words, an extending of the depleted layer can be terminated by disposing the trench, so as to avoid reaching the depleted layer to the end of the semiconductor chip. Accordingly, a leakage current generated from the cell regionalong the direction toward the end of the semiconductor chip can be reduced.