The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Jan. 27, 2009
Sea-fue Wang, Taipei, TW;
Jui-chen Pu, Taipei, TW;
Chia-lun Lin, Taipei, TW;
Fu-ting Hsu, Taipei, TW;
Kai-hung Hsu, Taipei, TW;
Yu-chuan Wu, Taipei, TW;
Shea-jue Wang, Taipei, TW;
Chien-min Sung, Taipei, TW;
Shao-chung HU, Taipei, TW;
Ming-chi Kan, Taipei, TW;
Sea-Fue Wang, Taipei, TW;
Jui-Chen Pu, Taipei, TW;
Chia-Lun Lin, Taipei, TW;
Fu-Ting Hsu, Taipei, TW;
Kai-Hung Hsu, Taipei, TW;
Yu-Chuan Wu, Taipei, TW;
Shea-Jue Wang, Taipei, TW;
Chien-Min Sung, Taipei, TW;
Shao-Chung Hu, Taipei, TW;
Ming-Chi Kan, Taipei, TW;
National Taipei University Technology, Taipei, TW;
Abstract
Method for production of diamond-like carbon film having semiconducting properties comprises preparing a boron-doped diamond-like carbon (B-DLC) thin film on a silicon substrate through a radio frequency magnetron sputtering process, wherein a composite target material formed by inserting boron tablet as a dopant source in a graphite target is used. After forming a boron-containing diamond-like carbon film, the thin film is annealed at a temperature of 500° C. and kept at this temperature for 10 minutes, and determine its carrier concentration and resistivity. Thus demonstrated that the polarity of said boron-doped diamond-like carbon film is p-type semiconductor characteristic. Carrier concentration can be up to 1.3×1018 cm-3, and its resistivity is about 0.6 Ω-cm; consequently. The boron-doped semiconducting diamond-like carbon film having excellent semiconductor property and high temperature stability according to the invention is best applicable in solar cell or electronic communication and electrode elements and equipments.