The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Apr. 09, 2007
Applicant:
Tsuyoshi Kubota, Saga, JP;
Inventor:
Tsuyoshi Kubota, Saga, JP;
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/469 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of measuring a diffusion length of a minority carrier in a silicon wafer by a surface photovoltage method including irradiating the surface-treated silicon wafer with ultraviolet radiation in an oxygen-containing atmosphere, and measuring a diffusion length of a minority carrier in a silicon wafer by a surface photovoltage method.
Quick Actions:
Kubota, Tsuyoshi. (2010). Method of measuring minority carrier diffusion length and method of manufacturing silicon wafer (U.S. Patent No. 7727783). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7727783
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