The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 01, 2010

Filed:

Jan. 23, 2008
Applicants:

Masashi Sugishita, Toyama, JP;

Masaaki Ueno, Toyama, JP;

Akira Hayashida, Toyama, JP;

Inventors:

Masashi Sugishita, Toyama, JP;

Masaaki Ueno, Toyama, JP;

Akira Hayashida, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor manufacturing apparatus and substrate processing method includes a step of acquiring a measurement value based on a first detecting and a second detecting section and determining a first difference of measurement values between the first detecting section and the second detecting section, comparing between a previously stored second difference between measurement values concerning the first detecting section and the second detecting section, calculating a correction value for a pressure in a cooling-gas passage provided between a process chamber and a heating device depending upon the first difference when the first difference is different from the second difference, and correcting the pressure value based on the pressure correction value, and a step of processing the substrate by flowing a cooling gas through the cooling-gas passage while heating the process chamber, and placing the heating device and the cooling device under a control section depending upon a pressure value corrected.


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