The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7724572 B1

PDF
Full Text
Expired
Date of Patent:
May. 25, 2010

Filed:

Jun. 13, 2006
Applicants:

Jong-wook Park, Chungcheongbuk-Do, KR;

Sang-jae Lee, Sungnam, KR;

Myung-gyoo Won, Suwon, KR;

Inventors:

Jong-Wook Park, Chungcheongbuk-Do, KR;

Sang-Jae Lee, Sungnam, KR;

Myung-Gyoo Won, Suwon, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor integrated circuit device has a fuse device that can be electrically disconnected without a breakage caused by using a laser beam or current. The semiconductor integrated circuit device employs, as the fuse device for storing status information, a MOSFET of a single polysilicon EEPROM-type cell manufactured through a process of fabricating a volatile semiconductor memory cell array.


Find Patent Forward Citations

Park, Jong-Wook. (2010). Integrated circuit having a non-volatile memory cell transistor as a fuse device (U.S. Patent No. 7724572). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7724572

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