The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Jun. 25, 2004
Woo Hyun Kim, Seoul, KR;
Woo Hyun Kim, Seoul, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
An in-plane switching (IPS) mode liquid crystal display (LCD) device having a color filter on TFT (COT) structure therein and a method for manufacturing the same is disclosed to improve picture quality by decreasing the reflection of external light above the data line, to obtain the economic efficiency, simplify the manufacturing process by forming a light-shielding layer of a metal material, and to solve the problem of decreasing aperture ratio after bonding lower and upper substrates to each other. The device includes first and second substrates facing each other, gate and data lines crossing each other on the first substrate to define a pixel region, a first common line parallel to the gate line, a thin film transistor at a crossing portion of the gate and data lines, an insulating interlayer on an entire surface of the first substrate including the data line, color filters in the pixel region, wherein at least one of the color filters completely covers the data line, a planarization layer on the entire surface of the first substrate including the color filter layers, a second common line along the gate line and the thin film transistor; common electrodes completely overlapping the data line, and arranged at one direction in the pixel region, and a pixel electrode in contact with a drain electrode of the thin film transistor and formed between the common electrodes at fixed intervals.