Semiconductor device

Abstract

A technology providing an improvement in the durability in the condition of changing the temperature, while ensuring characteristics such as the applicability to applications utilizing larger electric current, lower resistance and the like can be achieved. A semiconductor deviceincludes a ceramic multiple-layered interconnect substrate, a silicon chipthat is flip-bonded to a chip-carrying region of the ceramic multiple-layered interconnect substrate, and an external connecting bumpsand an external connecting bumps, which are provided in the side that the silicon chipof the ceramic multiple-layered interconnect substrateis carried. The silicon chipincludes a front surface electrode and a back surface electrode. The ceramic multiple-layered interconnect substrateincludes an interconnect layer composed of a conductive material, and the interconnect layer composes a multiple-layered interconnect layer provided on a front surface and in an interior of the ceramic multiple-layered interconnect substrate. The front surface electrode of the silicon chip is electrically connected to the external connecting bumpand the external connecting bumpthrough the multiple-layered interconnects in the multiple-layered interconnect layer.