The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7723801 B1

PDF
Full Text
Expired
Date of Patent:
May. 25, 2010

Filed:

Dec. 14, 2007
Applicant:

Jung-ho Ahn, Seoul, KR;

Inventor:

Jung-Ho Ahn, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device including a semiconductor substrate having source/drain regions, a gate electrode formed on and/or over the semiconductor substrate, spacers formed against sidewalls of the gate electrode, an interlayer insulating layer formed over the semiconductor substrate and the gate electrode and having a plurality of contact holes formed therein, and contact plugs formed within the contact holes. The contact plugs can include a first contact plug and a second contact plug electrically connected to the gate electrode, and a third contact plug and a fourth contact plug electrically connected to the source/drain regions.


Find Patent Forward Citations

Ahn, Jung-Ho. (2010). Semiconductor device and method of fabricating the same, and nor gate circuit using the semiconductor device (U.S. Patent No. 7723801). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7723801

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…