The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Dec. 05, 2008
Byung-jun Hwang, Seoul, KR;
Jae-kwan Park, Suwon-si, KR;
Jee-hoon Han, Yongin-si, KR;
So-wi Jin, Hwaseong-si, KR;
Nam-su Lim, Hwaseong-si, KR;
Byung-jun Hwang, Seoul, KR;
Jae-kwan Park, Suwon-si, KR;
Jee-hoon Han, Yongin-si, KR;
So-wi Jin, Hwaseong-si, KR;
Nam-su Lim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A NAND flash memory device includes a plurality of active regions extending in a first direction on a substrate, the active regions including a first well of a first conductivity, a plurality of word lines extending on the first well in a second direction perpendicular to the first direction, first and second dummy word lines extending in a second direction on the first well, the first and second dummy word lines being separated from each other to define an intermediate region therebetween, the first and second dummy word lines being adapted to receive a substantially constant bias voltage of about 0 V, and at least one contact in an active region in the intermediate region between the first and second dummy word lines.