The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Mar. 30, 2007
Tim Boescke, Dresden, DE;
Uwe Schroeder, Dresden, DE;
Tim Boescke, Dresden, DE;
Uwe Schroeder, Dresden, DE;
Qimonda AG, Munich, DE;
Abstract
A capacitor structure comprises a first and a second electrode of conducting material. Between the first and second electrodes, an atomic layer deposited dielectric film is disposed, which comprises zirconium oxide and a dopant oxide. Herein, the dopant comprises an ionic radius that differs by more than 24 pm from an ionic radius of zirconium, while the dielectric film comprises a dopant content of 10 atomic percent or less of the dielectric film material excluding oxygen. A process for fabricating a capacitor comprises a step of forming a bottom electrode of the capacitor. On the bottom electrode, a dielectric film comprising zirconium oxide is deposited, and a step for introducing a dopant oxide into the dielectric film performed. On the dielectric structure, a top electrode is formed. The dopant comprises an ionic radius that differs by more than 24 pm from an ionic radius of zirconium, whereas the dielectric structure deposited comprises a dopant content of 10 atomic percent or less of the deposited material excluding oxygen.