The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2010

Filed:

Nov. 11, 2004
Applicants:

Patricia Lustoza DE Souza, Rio de Janeiro, BR;

Christiana Villas-bôas Tribuzy, Rio de Janeiro, BR;

Maurício Pamplona Pires, Rio de Janeiro, BR;

Sandra Marcela Landi, Rio de Janeiro, BR;

Inventors:

Patricia Lustoza De Souza, Rio de Janeiro, BR;

Christiana Villas-Bôas Tribuzy, Rio de Janeiro, BR;

Maurício Pamplona Pires, Rio de Janeiro, BR;

Sandra Marcela Landi, Rio de Janeiro, BR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a calibration method, the relation between dopant concentrations of δ-doping layers in a multilayered semiconductor structure and process parameters is determined Sbased on multiple bulk specimens of the material in which the δ-doping layers are located. A desired dopant concentration is selected S, and the semiconductor structure with predetermined doping levels can be generated Sbased on the relation between the process parameters and the predetermined doping concentrations.


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