The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Sep. 04, 2006
Takayoshi Takano, Kawanishi, JP;
Yukihiro Kondo, Hirakata, JP;
Junji Ikeda, Suita, JP;
Hideki Hirayama, Asaka, JP;
Takayoshi Takano, Kawanishi, JP;
Yukihiro Kondo, Hirakata, JP;
Junji Ikeda, Suita, JP;
Hideki Hirayama, Asaka, JP;
Panasonic Electric Works Co., Ltd., Kadoma-Shi, JP;
Riken, Wako-Shi, JP;
Abstract
A semiconductor light emitting device includes an n-type nitride semiconductor layerformed on one surface side of a single-crystal substratefor epitaxial growth through a first buffer layer, an emission layerformed on a surface side of the n-type nitride semiconductor layer, and a p-type nitride semiconductor layerformed on a surface side of the emission layer. The emission layerhas an AlGaInN quantum well structure, and a second buffer layerhaving the same composition as a barrier layerof the emission layeris provided between the n-type nitride semiconductor layerand the emission layer. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGaInN as a material of the emission layer.