The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Nov. 29, 2005
Atsushi Sano, Toyama, JP;
Sadayoshi Horii, Toyama, JP;
Hideharu Itatani, Nanto, JP;
Katsuhiko Yamamoto, Himi, JP;
Atsushi Sano, Toyama, JP;
Sadayoshi Horii, Toyama, JP;
Hideharu Itatani, Nanto, JP;
Katsuhiko Yamamoto, Himi, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
The ability to control a concentration ratio of a metal and silicon in a metal silicate film is improved, allowing a high-quality semiconductor device to be manufactured. A step is provided for supplying a first raw material, which contains a metal atom, and a second raw material, which contains a silicon atom and a nitrogen atom, into a processing chamber (); and forming on a substrate () a metal silicate film containing the metal atom and silicon atom. A raw material supply ratio of the first and second raw materials is controlled in the step of forming a metal silicate film, thereby controlling a concentration ratio of the metal and silicon in the resulting metal silicate film.